The sandblasting use prospects in the semiconductor diodes production

V. Zhukov, S. A. Stepanov
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Abstract

The process of manufacturing semiconductor components for the production of microwave diodes is considered. Scientifically based recommendations are presented for the separation of relatively thick, up to 1.5 mm, stacked silicon-based semiconductor substrates by the so-called sandblasting method, based on masking and pneumatic jet cutting of the substrate with micro abrasive powder. It is described the masking method and the principals of setting of the operating parameters of the packaged substrate jet processing, which were tested with a positive result on a pilot industrial sandblasting plant currently used by a domestic enterprise.
喷砂技术在半导体二极管生产中的应用前景
研究了微波二极管半导体元件的制造工艺。对于相对较厚、厚度可达1.5 mm的堆叠硅基半导体衬底的分离,提出了科学的建议,即采用所谓的喷砂方法,利用微磨料粉末对衬底进行掩蔽和气动射流切割。介绍了封装基板射流加工的遮蔽方法和操作参数的设定原则,并在国内某企业目前使用的工业喷砂装置上进行了试验,取得了良好的效果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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