A study on Improvement of Electrical and Retention characteristics of Non-volatile Memory with Al2O3 Insulator

2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2019-07-01 DOI:10.23919/AM-FPD.2019.8830613

Geonju Yoon, Jeongsoo Kim, Donggi Shin, Kumar Mallem, Jinsu Park, Jaemin Kim, Jaehyun Cho, Sangwoo Bae, Jin-Seok Kim, Hyun-Hoo Kim, J. Yi

{"title":"A study on Improvement of Electrical and Retention characteristics of Non-volatile Memory with Al2O3 Insulator","authors":"Geonju Yoon, Jeongsoo Kim, Donggi Shin, Kumar Mallem, Jinsu Park, Jaemin Kim, Jaehyun Cho, Sangwoo Bae, Jin-Seok Kim, Hyun-Hoo Kim, J. Yi","doi":"10.23919/AM-FPD.2019.8830613","DOIUrl":null,"url":null,"abstract":"We report the controllable charge (Electron/hole) trapping window layer properties of atomic layer deposited (ALD) aluminum oxide (Al2O3) gate dielectric layer on the Si substrate. Electron/hole blocking mechanism was archived by controlling the Al2O3 composition, band gap and post deposition annealing affect, respectively. The chemical composition of the Al2O3 was confirmed from the X-ray photoelectron spectroscopy analysis. The capacitance-voltage (C-V) characteristic of Al/Al2O3/Si (MOS) metal-oxide-semiconductor structure showed clear accumulation, depletion and inversion regions as-compared with the Al/SiNx/Si MOS devices, respectively, From the C-V curves, the flat band voltage(ΔFB) was shifted accordingly positive and negative with respect to electron/hole trapping effect. In addition, 10 nm AlOx storage layer and SiNx storage layer were compared in the same structure. The 10 nm SiNx storage layer showed a very low retention of 55.1% and the memory window also showed a relatively low value of 2.72V at 18V.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/AM-FPD.2019.8830613","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

Abstract

We report the controllable charge (Electron/hole) trapping window layer properties of atomic layer deposited (ALD) aluminum oxide (Al2O3) gate dielectric layer on the Si substrate. Electron/hole blocking mechanism was archived by controlling the Al2O3 composition, band gap and post deposition annealing affect, respectively. The chemical composition of the Al2O3 was confirmed from the X-ray photoelectron spectroscopy analysis. The capacitance-voltage (C-V) characteristic of Al/Al2O3/Si (MOS) metal-oxide-semiconductor structure showed clear accumulation, depletion and inversion regions as-compared with the Al/SiNx/Si MOS devices, respectively, From the C-V curves, the flat band voltage(ΔFB) was shifted accordingly positive and negative with respect to electron/hole trapping effect. In addition, 10 nm AlOx storage layer and SiNx storage layer were compared in the same structure. The 10 nm SiNx storage layer showed a very low retention of 55.1% and the memory window also showed a relatively low value of 2.72V at 18V.

查看原文本刊更多论文

Al2O3绝缘体改善非易失性存储器电学和保持特性的研究

本文报道了硅衬底上原子层沉积(ALD)氧化铝(Al2O3)栅极介电层的可控电荷(电子/空穴)俘获窗层特性。通过控制Al2O3的组成、带隙和沉积后退火的影响，研究了电子/空穴的阻挡机制。通过x射线光电子能谱分析确定了Al2O3的化学成分。Al/Al2O3/Si (MOS)金属氧化物半导体结构的电容电压(C-V)特性与Al/SiNx/Si MOS器件相比，分别表现出明显的积累区、枯竭区和反转区，从C-V曲线上可以看出，由于电子/空穴捕获效应，平带电压(ΔFB)相应发生了正负偏移。此外，还比较了相同结构下的10 nm AlOx存储层和SiNx存储层。10 nm的SiNx存储层的保留率很低，为55.1%，在18V时的存储窗口也相对较低，为2.72V。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

自引率

0.00%

发文量