Non-inductive impedance transformer

Abstract

An innovative design for a noninductive transformer circuit that transforms values of impedance less than 1 /spl Omega/ to very high values of approximately several k/spl Omega/ is based on GaAs CHIGFET technology, with intrinsic radiation hardness in excess of several hundred megarads. A principal advantage of the circuit is that the speed and bandwidth sensitivity is weakly affected by detector source capacity (up to 1 nF), thereby allowing greater design flexibility for both hadronic and electromagnetic calorimetry, or even charge particle detection (tracking) integrated within the same device. The simulated risetime is less than 2 ns, and power dissipated is less than 40 mW.