Millimeter Wave GaAs IMPATT Diodes

Abstract

Amplifiers and oscillators, using gallium arsenide (GaAs) double-drift IMPATT diodes have become one of the leading solid-state contenders to replace electron tubes as power sources in millimeter wave systems. In this paper, we describe the state-of-the-art performance obtained in our laboratory through device and circuit modeling. Some results obtained at frequencies ranging from 20 to 94 GHz are shown.