{"title":"An analytical model of short-channel effect for sub-100 nm MOSFET with graded junction and halo doped channel","authors":"C. Shih, C. Lien","doi":"10.1109/ISDRS.2003.1272195","DOIUrl":null,"url":null,"abstract":"In this paper the analytical channel potential solution and short-channel effect model are derived for sub-100 nm MOSFET with graded junction and halo doped channel. The dependence of the counter-doping due to graded source/drain junction is presented for the first time. Scale-length approach for solving 2D poisson's equation is extended to find the channel potential successfully. By this model, the lateral non-uniform channel devices can be reduced into uniform devices with shorter lengths. The effects of the halo and graded junction on short-channel MOSFET can be illustrated from the viewpoints of the distributed effective-doping concentration and the exponential roll-off behavior.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"119 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1272195","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper the analytical channel potential solution and short-channel effect model are derived for sub-100 nm MOSFET with graded junction and halo doped channel. The dependence of the counter-doping due to graded source/drain junction is presented for the first time. Scale-length approach for solving 2D poisson's equation is extended to find the channel potential successfully. By this model, the lateral non-uniform channel devices can be reduced into uniform devices with shorter lengths. The effects of the halo and graded junction on short-channel MOSFET can be illustrated from the viewpoints of the distributed effective-doping concentration and the exponential roll-off behavior.