The role of excitation wavelength on debris for Co2 and Nd:YAG laser-produced plasma EUVL sources

Abstract

Current visible and ultraviolet light imprinting methods for manufacturing computer chips have reached their maximum limitations and the extreme ultraviolet (EUV) region has been selected as a possible successor. While extreme ultraviolet lithography (EUVL) offers a solution to advancing Moore's Law, several problems persist pursuant to large-scale industrial and high volume manufacturing. Laser produced plasmas (LPP) from tin targets have been demonstrated to emit EUV radiation (13.5 nm light) with an industrially acceptable conversion efficiency, although debris accumulation on the collector optics is still an issue.1