UNI-MOS: a unified SPICE built-in MOSFET model for circuit simulation and lifetime evaluation

Abstract

A lightly doped drain (LDD) MOS device model for circuit simulation in SPICE is described. UNI-MOS includes a consistent set of DC (I-V), AC (C-V), and hot electron degradation effect models. For the I-V and C-V models, results for achieving accurate and computationally efficient models of both conventional and LDD MOSFETs with submicron channel length are described. Strategies for implementing the hot electron effect in the circuit simulator for predicting the lifetime of a device or circuit in a VLSI environment are demonstrated.<>