{"title":"MOCVD Epitaxy of α-(AlxGa1−x)2O3 (x =0–100%) on m-Plane Sapphire Substrate","authors":"A. Bhuiyan, Zixuan Feng, Hsien-Lien Huang, Lingyu Meng, Jinwoo Hwang, Hongping Zhao","doi":"10.1109/csw55288.2022.9930429","DOIUrl":null,"url":null,"abstract":"Phase pure single crystal α-(Al<inf>x</inf>Ga<inf>1−x</inf>)<inf>2</inf>O<inf>3</inf> thin films are successfully grown on m-plane sapphire substrate via MOCVD. Comprehensive characterization by XRD, RSM mapping, atomic resolution STEM, Raman spectroscopy, SEM, AFM and XPS measurements reveal high quality epitaxial growth of α-(Al<inf>x</inf>Ga<inf>1−x</inf>)<inf>2</inf>O<inf>3</inf> thin films over the entire Al composition range (x=0–100%) and α-GaO/AlGaO superlattice structures with smooth surface morphology, sharp interfaces, and homogenous Al distribution. The bandgap energies of 5.41 eV (x=0) to 8.81 eV (x=1) are extracted from XPS measurements. The determined band offsets reveal a type-I band alignment at the α-AlGaO/GaOinterfaces with valance and conduction band offsets of 0.27 eV and 3.13 eV between α-Ga<inf>2</inf>O<inf>3</inf> and α-Al<inf>2</inf>O<inf>3</inf>, respectively.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 Compound Semiconductor Week (CSW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/csw55288.2022.9930429","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Phase pure single crystal α-(AlxGa1−x)2O3 thin films are successfully grown on m-plane sapphire substrate via MOCVD. Comprehensive characterization by XRD, RSM mapping, atomic resolution STEM, Raman spectroscopy, SEM, AFM and XPS measurements reveal high quality epitaxial growth of α-(AlxGa1−x)2O3 thin films over the entire Al composition range (x=0–100%) and α-GaO/AlGaO superlattice structures with smooth surface morphology, sharp interfaces, and homogenous Al distribution. The bandgap energies of 5.41 eV (x=0) to 8.81 eV (x=1) are extracted from XPS measurements. The determined band offsets reveal a type-I band alignment at the α-AlGaO/GaOinterfaces with valance and conduction band offsets of 0.27 eV and 3.13 eV between α-Ga2O3 and α-Al2O3, respectively.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
