R. Sodhi, D.A. Girdhar, Chiu Ng, Jie Zhang, V. Bolloju
{"title":"600V depletion stop trench IGBTs for appliance applications","authors":"R. Sodhi, D.A. Girdhar, Chiu Ng, Jie Zhang, V. Bolloju","doi":"10.1109/IICPE.2006.4685343","DOIUrl":null,"url":null,"abstract":"Trench IGBTs have been in development for over 20 years and are extensively used in high voltage and high power applications. This paper presents International Rectifierpsilas latest trench IGBT technology optimized for appliance applications. A detailed, calibrated device model has been developed to understand and optimize these devices. The optimized device exhibited lower collector-to-emitter saturation voltage (VCEON) and lower switching loss than the previous Punch-Through (PT) and Non-Punch-Through (NPT) IGBT devices. In the actual applications, the devices reduce losses and deliver up to 60% more RMS current than the previous generation of devices. This also leads to ~ 50% reduction in heat sink size and ~ 25% reduction in the integrated module size.","PeriodicalId":227812,"journal":{"name":"2006 India International Conference on Power Electronics","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 India International Conference on Power Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IICPE.2006.4685343","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Trench IGBTs have been in development for over 20 years and are extensively used in high voltage and high power applications. This paper presents International Rectifierpsilas latest trench IGBT technology optimized for appliance applications. A detailed, calibrated device model has been developed to understand and optimize these devices. The optimized device exhibited lower collector-to-emitter saturation voltage (VCEON) and lower switching loss than the previous Punch-Through (PT) and Non-Punch-Through (NPT) IGBT devices. In the actual applications, the devices reduce losses and deliver up to 60% more RMS current than the previous generation of devices. This also leads to ~ 50% reduction in heat sink size and ~ 25% reduction in the integrated module size.