Noise characterization of Silicon-Germanium HBTs

Abstract

Coupled process and device simulations have been applied to study the microwave noise performance of high frequency Silicon-Germanium heterojunction bipolar transistors. The detrimental effects of noise in advanced strain-engineered bipolar devices with highly scaled device dimensions are discussed in detail. Y-parameter based technique has been used to extract the noise parameters of bipolar transistors to account for the correlation between the base and collector shot noise.