14nm FinFET based 0.8V Supply 25Gbps Subsampler and Phase Detector Circuits for All Digital CDR

Sai Bhargav Sriramoju, Subhakumar Reddy Ankireddypalli
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Abstract

In this paper, the design of subsampler and phase detector circuits at 14nm technology node (FinFET) is presented. The design is carried out on cadence virtuoso with a supply voltage of 0.8V and across process corners (ss, sf, tt, fs, ff). The designed subsampler and phase detector circuits are in compliance with the All-digital clock and data recovery (ADCDR) circuit and which is applicable to passive optical networks of 4 channels with a speed of 25Gbps per channel by consuming a power dissipation of 0.9728 mW.
基于14nm FinFET的全数字CDR 0.8V电源25Gbps下采样器和鉴相电路
本文介绍了14nm技术节点(FinFET)下采样器和鉴相器电路的设计。设计是在cadence virtuoso上进行的,电源电压为0.8V,跨工艺角(ss, sf, tt, fs, ff)。所设计的下采样器和鉴相器电路符合全数字时钟和数据恢复(ADCDR)电路,适用于每通道速度为25Gbps的4通道无源光网络,功耗为0.9728 mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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