55nm high mobility SiGe(:C) pMOSFETs with HfO/sub 2/ gate dielectric and TiN metal gate for advanced CMOS

Abstract

For the first time, MOS transistors with compressively strained SiGe(:C) channel, metal gate and high-k dielectric are demonstrated down to 55nm gate length. SiGe(:C) surface channel pMOSFETs with HfO/sub 2/ gate dielectric exhibit a 10/sup 4/ gate leakage reduction and a 65% mobility enhancement at high transverse effective field (1MV/cm) when compared to the universal SiO/sub 2//Si reference. With such a thin Equivalent Oxide Thickness (EOT= 16-18/spl Aring/), this represents the best gate leakage/mobility trade-off ever published.