Reliability Research of GaN-Based blue Semiconductor Lasers

Abstract

With the development of GaN material epitaxy technology, GaN-based blue semiconductor lasers have gradually entered people's vision, and their power has been increased from 5mW to several hundred watts now, which meets the needs of people's dailylife. However, the defects produced in the process of the epitaxial growth of the material and the increase of the temperature can affect its operating performance. Although the reliability of GaN-based semiconductor lasers has been analysed and discussed by many foreign scholars, there are few reports in China. In this paper, based on previous research combined with the thermal generation mechanism of blue semiconductor lasers, the reliability research work and failure mechanism of GaN-based semiconductor lasers are summarised. The thermal characteristics are invested with simulated results by ANSYS, and corresponding improvement schemes are proposed. This helps to enhance the lifetime of GaN-based blue semiconductor lasers and further promote the application of blue lasers in industrial production and daily life.