Full wave Modeling and Analysis of Plasmonic HEMT performance

Abstract

The full wave analysis of 2-D plasmon propagation in a high electron mobility transistor (HEMT) channel is presented. The Maxwell’s equations and the hydrodynamic transport equations are solved simultaneously to model the structure, using the finite difference time domain (FDTD) numerical technique. By applying different bias voltages to the drain and the gate terminals, the properties of the 2-D plasmons along the channel are investigated. The analysis results show that the wavelength and the decay length of the propagation are significantly influenced by varying the bias voltages. So, it is possible to control the characteristics of the 2-D plasmon propagation along the channel and produce a reconfigurable structure for terahertz applications.