Enhancement of acoustoelectric interaction in semiconductors

1996 IEEE Ultrasonics Symposium. Proceedings Pub Date : 1996-11-03 DOI:10.1109/ULTSYM.1996.584050

Z.S. Wu, U.T. Sun, C. Gan, H. Qin, K. Chen

引用次数: 0

Abstract

The enhancement of acoustoelectric (AE) interaction in semiconductors produced by surface acoustic waves (SAW) is analyzed theoretically and observed experimentally. The illumination of Laser beam onto the crystalized-semiconductor has increased the AE interaction noticeably.

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半导体中声电相互作用的增强

从理论和实验上分析了表面声波对半导体中声电相互作用的增强作用。激光束照射在晶体半导体上，明显增加了声发射相互作用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1996 IEEE Ultrasonics Symposium. Proceedings

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