ENERGY BAND GAP AND THE REFRACTIVE INDEX FOR POLYANILINE THIN FILMS OF POLYANILINE IN THIN FILMS ON POLYETHYLENE SURFACE

Yuliia Stetsiv, M. Yatsyshyn, O. Reshetnyak
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Abstract

e-mail: yuliia.stetsiv@lnu.edu.ua Polyaniline (PAn) films, doped with citric acid, were synthesized on a polyethylene substrate by chemical oxidative polymerization using ammonium peroxydisulfate as an oxidant. The influence of monomer concentration on the optical properties of PAn films was investigated. Optical band gap, absorption coefficient, extinction coefficient, refractive index were calculated as a function of wavelength. Different methods for determining the energy of the energy gap (Tauc method and absorption spectrum fitting) were considered. It was found that the optical band gap for all thin PAn films is due to the direct allowed optical transitions. It was found that the band gap of PAn films decreases with increasing thickness of deposited PAn films. It is established that the optical energies of the band gap of PAn films of different thickness, estimated by the results of optical absorption measurements using Tauc methods and absorption spectrum fitting, are practically commensurate and are in the range of 3.13–2.36 eV for film thicknesses equal to 18.7–137.4 nm, respectively. Based on the correlations between the optical energy of the band gap and the refractive index of semiconductors using Moss, Ravindra, Ravindra-Gupta, Reddy-Ahammed, Gerve-Vandamme, Kumar-Singh, Annani and Duffy-Reddy ratios, the value of the refractive index of PAn films was calculated and these results were compared with the values obtained from the experimental results. From the obtained results it is seen that the refractive index of PAn films increases with increasing polyaniline film thickness on a polyethylene substrate. The values obtained from the Ravindra and Ravindra-Gupta relations are the closest to the experimental ones. Therefore, the synthesized PE/PAn films can be an available material for the production of optoelectronic devices, for example, for organic field transistors and LEDs.
聚乙烯表面聚苯胺薄膜的能带隙和折射率
以过氧二硫酸铵为氧化剂,在聚乙烯衬底上采用化学氧化聚合法制备了柠檬酸掺杂的聚苯胺(PAn)薄膜。研究了单体浓度对聚丙烯腈薄膜光学性能的影响。计算了光学带隙、吸收系数、消光系数、折射率随波长的变化规律。考虑了确定能隙能量的不同方法(tac法和吸收光谱拟合)。发现所有PAn薄膜的光学带隙都是由直接允许的光学跃迁引起的。发现PAn薄膜的带隙随沉积PAn薄膜厚度的增加而减小。利用Tauc法的光吸收测量结果和吸收光谱拟合结果表明,不同厚度PAn薄膜的带隙光能基本相当,在膜厚为18.7 ~ 137.4 nm时,带隙光能分别在3.13 ~ 2.36 eV范围内。利用Moss、Ravindra、Ravindra- gupta、reddy - ahmed、Gerve-Vandamme、Kumar-Singh、Annani和Duffy-Reddy比值,根据带隙光能与半导体折射率之间的关系,计算了PAn薄膜的折射率,并与实验结果进行了比较。结果表明,聚苯胺薄膜的折射率随聚苯胺薄膜厚度的增加而增加。由Ravindra关系和Ravindra- gupta关系得到的值与实验值最接近。因此,合成的PE/PAn薄膜可以成为生产光电器件的可用材料,例如用于有机场晶体管和led。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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