{"title":"Dimensional reduction effect on momentum of carrier electrons in nanoscale silicon materials","authors":"K. Nakamura","doi":"10.1109/ICIES.2012.6530848","DOIUrl":null,"url":null,"abstract":"The momenta of carrier electrons in three-dimensional bulk silicon and low-dimensional silicon nano-structures have been analyzed by means of first-principles Kohn-Sham orbitals. Quantum-mechanical expectation values of the momentum of electrons in the conduction band have been calculated with respect to k coordinate, and the dimensional confinement has been discussed based on the behavior of the momentum. The conduction-band structure of silicon(001) nanosheet with about 5 nm thickness traces back to the multivalley one of bulk silicon in terms of the momentum state, while the momentum state for less than 2 nm cannot connect with that of bulk silicon.","PeriodicalId":410182,"journal":{"name":"2012 First International Conference on Innovative Engineering Systems","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 First International Conference on Innovative Engineering Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIES.2012.6530848","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The momenta of carrier electrons in three-dimensional bulk silicon and low-dimensional silicon nano-structures have been analyzed by means of first-principles Kohn-Sham orbitals. Quantum-mechanical expectation values of the momentum of electrons in the conduction band have been calculated with respect to k coordinate, and the dimensional confinement has been discussed based on the behavior of the momentum. The conduction-band structure of silicon(001) nanosheet with about 5 nm thickness traces back to the multivalley one of bulk silicon in terms of the momentum state, while the momentum state for less than 2 nm cannot connect with that of bulk silicon.