Vacuum electron-based photodiode

Abstract

We have presented a detailed investigation of hybrid photodiode based on the combination of Gr/Si heterojunction and nanoscale vacuum device based on graphene-SiO2-Si (GrOS) field effect structure. We elucidate on the underlying mechanism of impact-ionization process in a two-Dimensional Electron Gas (2DEG) confined in quantum well, resulting in increasing the carrier multiplication and enabling ultrahigh speed optoelectronics.