An improved method for IGBT base excess carrier lifetime extraction

2009 International Conference on Applied Superconductivity and Electromagnetic Devices Pub Date : 2009-10-30 DOI:10.1109/ASEMD.2009.5306658

Yong Tang, Ming Chen, Bo Wang

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引用次数: 2

Abstract

The Insulated Gate Bipolar Transistor (IGBT) has been extensively used in all kinds of power electronics devices. But for a long time, the absence of effective methods for its parameters extraction limited the employment of simulator models, which also restricted the development of device application level. Base excess carrier lifetime (Tau) is an important parameter for tail-current and on-state voltage of IGBT, and is also a key one for IGBT physical model. However, the device manufacturer doesn't provide this value in the technical datasheet, and the exited extraction method is so complicated and hard to be carried out by common laboratories and researchers. Based on its turn-off characteristic and semiconductor theory, theoretic analysis and formulary derivation have been carried on in this paper. An improved simplified method for parameter extraction and data processing has also been put forward according to the different turn off characteristics and tail-current of NPT and Trenchstop IGBTs. At last, the experiment circuit has been designed and the experimental result shows the feasibility and accuracy of the new method.

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一种改进的IGBT碱基多余载流子寿命提取方法

绝缘栅双极晶体管(IGBT)已广泛应用于各种电力电子器件中。但长期以来，由于缺乏有效的参数提取方法，限制了仿真器模型的使用，也制约了器件应用层面的发展。基极剩余载流子寿命(Tau)是IGBT尾电流和导通电压的重要参数，也是建立IGBT物理模型的关键参数。然而，设备制造商没有在技术数据表中提供这个值，现有的提取方法非常复杂，普通实验室和研究人员很难进行。本文根据其关断特性和半导体理论，进行了理论分析和公式推导。根据非扩散管和截沟管的关断特性和尾电流的不同，提出了一种改进的参数提取和数据处理的简化方法。最后设计了实验电路，实验结果表明了新方法的可行性和准确性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2009 International Conference on Applied Superconductivity and Electromagnetic Devices

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