Increase sensitivity of the sensor based on bipolar magnetotransistor by minimization initial output offset

Abstract

In this article represent the experimental investigation of initial offset voltage between collectors in the integrated circuit including dual-collector lateral npn-type bipolar magnetotransistor in a p-well with polysilicon resistors. Choice of magnetotransistor circuit defines an operating mode and its influence on the offset. Initial offset between collectors voltage is reduced to value less than 1 mV that allows to increase relative useful output signal for a weak magnetic field.