Metal gate MOSFETs with HfO/sub 2/ gate dielectric

2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303) Pub Date : 2002-06-11 DOI:10.1109/VLSIT.2002.1015373

S. Samavedam, H. Tseng, P. Tobin, J. Mogab, S. Dakshina-Murthy, L. La, J. Smith, J. Schaeffer, M. Zavala, R. Martin, B. Nguyen, L. Hebert, O. Adetutu, V. Dhandapani, T. Luo, R. García, P. Abramowitz, M. Moosa, D. Gilmer, C. Hobbs, W. Taylor, J. Grant, R. Hegde, S. Bagchi, E. Luckowski, V. Arunachalam, M. Azrak

引用次数: 10

Abstract

We report for the first time electrical characterization of HfO/sub 2/ p- and n-MOSFETs with CVD TiN and PVD TaSiN gates respectively fabricated using conventional CMOS integration. Their performance is compared to PVD TiN-gated HfO/sub 2/ and SiO/sub 2/ n- and p-MOSFETs. To understand the issues with metal gates on high K gate dielectrics, PVD TiN MOSFETs were extensively characterized. At 10 nA//spl mu/m leakage, 0.345 mA//spl mu/m drive current was obtained from PVD TiN/HfO/sub 2/ p-MOSFETs. HfO/sub 2/ n-MOSFETs with metal gates show about 10/sup 4/ times reduction in gate leakage compared to poly/SiO/sub 2/ devices.

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具有HfO/sub /栅极电介质的金属栅mosfet

我们首次报道了HfO/sub 2/ p-和n- mosfet的电学特性，分别采用CVD TiN和PVD TaSiN栅极，采用传统的CMOS集成。将其性能与PVD tin门控HfO/sub 2/和SiO/sub 2/ n-和p- mosfet进行了比较。为了了解高K栅极介质上金属栅极的问题，对PVD TiN mosfet进行了广泛的表征。在泄漏10 nA//spl mu/m时，PVD TiN/HfO/sub 2/ p- mosfet的驱动电流为0.345 mA//spl mu/m。与poly/SiO/sub - 2/器件相比，具有金属栅极的HfO/sub - 2/ n- mosfet的栅极泄漏减少了约10/sup / 4/倍。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)

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