Li-Dyi Luo, K. D. Gannes, K. Fricke, S. Senjuti, R. Sobot
{"title":"Low-Power CMOS Voltage Regulator Architecture for Implantable RF Circuits","authors":"Li-Dyi Luo, K. D. Gannes, K. Fricke, S. Senjuti, R. Sobot","doi":"10.1109/RFID.2012.23","DOIUrl":null,"url":null,"abstract":"We present design architecture of a low--power voltage regulator that includes a charge--pump and a band gap voltage reference in CMOS 130nm technology. The DC regulator is intended for RF IC energy harvesting applications and optimized for powering implantable electronics. The internal circuit sections work with the local power supply voltage levels in the 1.5V to 1.9V range (worst case), and the 3.96uW band gap generates 462mVDC reference voltage. The complete regulator consumes typically 18uW for its own operation while delivering regulated V(PWR)=1V voltage within 0.14% variation under full load conditions, i.e. I(PWR)(max)=4mA current.","PeriodicalId":196995,"journal":{"name":"2012 Fourth International EURASIP Workshop on RFID Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 Fourth International EURASIP Workshop on RFID Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFID.2012.23","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
We present design architecture of a low--power voltage regulator that includes a charge--pump and a band gap voltage reference in CMOS 130nm technology. The DC regulator is intended for RF IC energy harvesting applications and optimized for powering implantable electronics. The internal circuit sections work with the local power supply voltage levels in the 1.5V to 1.9V range (worst case), and the 3.96uW band gap generates 462mVDC reference voltage. The complete regulator consumes typically 18uW for its own operation while delivering regulated V(PWR)=1V voltage within 0.14% variation under full load conditions, i.e. I(PWR)(max)=4mA current.