Ultra Low-Power Rail-to-Rail Voltage Comparator in 65 nm CMOS Technology

L. Nagy, M. Potocný, V. Stopjaková
{"title":"Ultra Low-Power Rail-to-Rail Voltage Comparator in 65 nm CMOS Technology","authors":"L. Nagy, M. Potocný, V. Stopjaková","doi":"10.1109/ICECCME55909.2022.9988140","DOIUrl":null,"url":null,"abstract":"The paper addresses a re-design and parameter analysis of a current-mode rail-to-rail voltage comparator with power consumption in nano-watt range across all PVT corners. The comparator design was done in general-purpose 65 nm CMOS technology with the nominal power supply voltage of 1.2 V. The circuit design needs to function properly in industrial temperature range, which is from -20°C to 85°C. The rail-to-rail input voltage range is achieved without employing two differential pairs and also without an internal voltage biasing circuitry. Furthermore, the design process can be easily automated by means of calculation spreadsheet and employing $g_{m}/I_{D}$ design methodology. The presented comparator has been analyzed for robustness and accuracy across all PVT corners using post-layout extracted netlist. A number of parameters was investigated by Monte-Carlo analysis. The power consumption does not exceed $\\mathbf{1}\\ \\mu \\mathbf{W}$ in the worst-case scenario, however in typical conditions, it remains below the first third of nano-watt range. The circuit also contains enable signal to minimize the power consumption when the circuit's function is not required. The topology itself, exhibits a promising potential for further research, since it can also work in ultra low-voltage regime thanks to only two stacked transistors.","PeriodicalId":202568,"journal":{"name":"2022 International Conference on Electrical, Computer, Communications and Mechatronics Engineering (ICECCME)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 International Conference on Electrical, Computer, Communications and Mechatronics Engineering (ICECCME)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECCME55909.2022.9988140","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

The paper addresses a re-design and parameter analysis of a current-mode rail-to-rail voltage comparator with power consumption in nano-watt range across all PVT corners. The comparator design was done in general-purpose 65 nm CMOS technology with the nominal power supply voltage of 1.2 V. The circuit design needs to function properly in industrial temperature range, which is from -20°C to 85°C. The rail-to-rail input voltage range is achieved without employing two differential pairs and also without an internal voltage biasing circuitry. Furthermore, the design process can be easily automated by means of calculation spreadsheet and employing $g_{m}/I_{D}$ design methodology. The presented comparator has been analyzed for robustness and accuracy across all PVT corners using post-layout extracted netlist. A number of parameters was investigated by Monte-Carlo analysis. The power consumption does not exceed $\mathbf{1}\ \mu \mathbf{W}$ in the worst-case scenario, however in typical conditions, it remains below the first third of nano-watt range. The circuit also contains enable signal to minimize the power consumption when the circuit's function is not required. The topology itself, exhibits a promising potential for further research, since it can also work in ultra low-voltage regime thanks to only two stacked transistors.
超低功耗轨对轨电压比较器在65纳米CMOS技术
本文讨论了电流型轨对轨电压比较器的重新设计和参数分析,该比较器的功耗在纳瓦范围内。比较器设计采用通用65nm CMOS技术,标称电源电压为1.2 V。电路设计需要在-20°C到85°C的工业温度范围内正常工作。轨到轨输入电压范围不需要采用两个差分对,也不需要内部电压偏置电路。此外,通过计算电子表格和采用$g_{m}/ $ I_{D}$设计方法,设计过程可以很容易地自动化。使用布局后提取的网表分析了所提出的比较器在所有PVT角上的鲁棒性和准确性。通过蒙特卡罗分析研究了一些参数。在最坏的情况下,功耗不超过$\mathbf{1}\ \mu \mathbf{W}$,但在典型情况下,功耗仍低于纳瓦范围的前三分之一。电路还包含使能信号,以尽量减少功耗时,电路的功能是不需要的。由于只有两个堆叠的晶体管,这种拓扑结构本身也可以在超低电压下工作,因此具有进一步研究的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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