Be-doped InGaAs/AlGaAs strained quantum well structures grown by molecular beam epitaxy

D.H. Zhang, W. Shi, P. Zhang, S. Yoon
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Abstract

The effects of doping concentration incorporated into the well material of the p-type InGaAs/AlGaAs multiple quantum well structures are investigated by photoluminescence and double crystal X-ray diffraction techniques. The increased Be doping is found to cause red shift of the dopant-related and excitonic luminescence in the well material of the structures, increase well width, deteriorate the interface quality and increase lattice mismatch. Those factors affect the positioning of the heavy and light holes in the valence band well, and thus the infrared wavelength resulted from the intersubband transition. These observations are useful for the design of p-type quantum well infrared photodetectors.
掺杂InGaAs/AlGaAs的分子束外延应变量子阱结构
采用光致发光和双晶x射线衍射技术研究了掺杂浓度对p型InGaAs/AlGaAs多量子阱结构的影响。随着Be掺杂量的增加,结构的阱材料中掺杂相关发光和激子发光发生红移,阱宽度增加,界面质量恶化,晶格失配增加。这些因素很好地影响了价带中重孔和轻孔的定位,从而产生了子带间跃迁产生的红外波长。这些结果对p型量子阱红外探测器的设计有一定的参考价值。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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