{"title":"Structural, optical and electrical properties of sputtered Nb doped TiO2 transparent conductive films","authors":"Letao Zhang, Hongyang Zuo, Qian Ma, Shengdong Zhang","doi":"10.23919/AM-FPD.2019.8830557","DOIUrl":null,"url":null,"abstract":"Sputtered TNO films with various thicknesses were prepared and post-annealed by single step (vacuum or O2) and dual steps (vacuum + O2 or O2 + vacuum) at 300 °C. The TNO films (20–110 nm) with vacuum annealing are polycrystalline and conductive. After treated by vacuum + O2 annealing, thick TNO films (40–110 nm) exhibit O-poor state with low resistivity in comparison with insulating 20 nm TNO film. In contrast, the TNO films treated by O2 or O2 + vacuum annealing are insulating or with large resistivity. Besides, the vacuum annealed 20 nm TNO film presents abnormal properties, such as larger lattice constant and lower optical band gap, which is probably induced by the stress from substrates or grains.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/AM-FPD.2019.8830557","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Sputtered TNO films with various thicknesses were prepared and post-annealed by single step (vacuum or O2) and dual steps (vacuum + O2 or O2 + vacuum) at 300 °C. The TNO films (20–110 nm) with vacuum annealing are polycrystalline and conductive. After treated by vacuum + O2 annealing, thick TNO films (40–110 nm) exhibit O-poor state with low resistivity in comparison with insulating 20 nm TNO film. In contrast, the TNO films treated by O2 or O2 + vacuum annealing are insulating or with large resistivity. Besides, the vacuum annealed 20 nm TNO film presents abnormal properties, such as larger lattice constant and lower optical band gap, which is probably induced by the stress from substrates or grains.