A low power trimming-free relaxation oscillator with process and temperature compensation

Mengmeng Yao, Yao Wang, Zhaolei Wu, J. Liou
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Abstract

A low power trimming-free relaxation oscillator with process and temperature compensation is presented. It adopts a current reference based on transistors working in strong-inversion region and another subthreshold MOSFET current reference to generate the reference voltages for the comparator stage and the charging/discharging current for the oscillator core, respectively. The instability of the time constant RC induced by process and temperature variations are compensated by this scheme. The circuit is designed using TSMC 0.18$\mu$m standard CMOS process and simulated with Spectre. Simulations results show that the worst-case variation of the oscillation frequency is ± 4.5% from -20 to 80°C in five different process corners. The power for the proposed oscillator is only 253 nW at 27° C.
具有过程和温度补偿的低功率无微调弛豫振荡器
提出了一种具有过程和温度补偿的低功率无微调弛豫振荡器。它采用基于工作在强反转区的晶体管的电流基准和另一个亚阈值MOSFET电流基准,分别产生比较器级的参考电压和振荡器核心的充放电电流。该方案补偿了工艺和温度变化引起的时间常数RC的不稳定性。该电路采用TSMC 0.18$\mu$m标准CMOS工艺设计,并使用Spectre进行仿真。仿真结果表明,在-20 ~ 80°C范围内,5个不同工艺角的振荡频率最坏变化量为±4.5%。所提出的振荡器在27°C时的功率仅为253 nW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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