An Area-Power-Efficient AFE with NS-SAR ADC For High-Frequency Ultrasound Applications

Yimin Wu, Shuai Li, L. Luo, Fan Ye, Junyan Ren
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引用次数: 1

Abstract

This paper presents an integrated ultrasound analog front-end (AFE) featuring wide bandwidth and high area-power-efficiency, which is suitable for high-frequency ultrasound applications. The AFE includes an LNA. VGA, and NS-SAR ADC. The LNA and VGA adopt energy-efficient architecture and achieve more than 100MHz bandwidth. The ADC utilizes a bandpass noise-shaping SAR scheme, improving SNR within the bandwidth of a PMUT transducer. The prototype is fabricated in a 0.18μm HV process, which can further be integrated with HV TX components. The test and simulation results show that this AFE has a channel SNR of 68dB with 28-40dB gain control range and 60MHz sampling rate, occupying 25.68mW power and 0.152 mm2 chip area.
用于高频超声应用的具有NS-SAR ADC的区域节能AFE
本文提出了一种适用于高频超声应用的集成超声模拟前端(AFE),具有带宽宽、面积功率效率高的特点。AFE包括LNA。VGA和NS-SAR ADC。LNA和VGA采用节能架构,带宽可达100MHz以上。ADC采用带通噪声整形SAR方案,提高了PMUT换能器带宽内的信噪比。该原型机采用0.18μm HV工艺制造,可进一步与HV TX组件集成。测试和仿真结果表明,该AFE的信道信噪比为68dB,增益控制范围为28-40dB,采样率为60MHz,功耗为25.68mW,芯片面积为0.152 mm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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