{"title":"An Area-Power-Efficient AFE with NS-SAR ADC For High-Frequency Ultrasound Applications","authors":"Yimin Wu, Shuai Li, L. Luo, Fan Ye, Junyan Ren","doi":"10.1109/APCCAS50809.2020.9301650","DOIUrl":null,"url":null,"abstract":"This paper presents an integrated ultrasound analog front-end (AFE) featuring wide bandwidth and high area-power-efficiency, which is suitable for high-frequency ultrasound applications. The AFE includes an LNA. VGA, and NS-SAR ADC. The LNA and VGA adopt energy-efficient architecture and achieve more than 100MHz bandwidth. The ADC utilizes a bandpass noise-shaping SAR scheme, improving SNR within the bandwidth of a PMUT transducer. The prototype is fabricated in a 0.18μm HV process, which can further be integrated with HV TX components. The test and simulation results show that this AFE has a channel SNR of 68dB with 28-40dB gain control range and 60MHz sampling rate, occupying 25.68mW power and 0.152 mm2 chip area.","PeriodicalId":127075,"journal":{"name":"2020 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APCCAS50809.2020.9301650","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper presents an integrated ultrasound analog front-end (AFE) featuring wide bandwidth and high area-power-efficiency, which is suitable for high-frequency ultrasound applications. The AFE includes an LNA. VGA, and NS-SAR ADC. The LNA and VGA adopt energy-efficient architecture and achieve more than 100MHz bandwidth. The ADC utilizes a bandpass noise-shaping SAR scheme, improving SNR within the bandwidth of a PMUT transducer. The prototype is fabricated in a 0.18μm HV process, which can further be integrated with HV TX components. The test and simulation results show that this AFE has a channel SNR of 68dB with 28-40dB gain control range and 60MHz sampling rate, occupying 25.68mW power and 0.152 mm2 chip area.