A very low power CMOS mixed-signal IC for implantable pacemaker applications

L. Wong, Shohan Hossain, Andrew Ta, Jörgen Edvinsson, Dominic H. Rivas, Hans Nääs
{"title":"A very low power CMOS mixed-signal IC for implantable pacemaker applications","authors":"L. Wong, Shohan Hossain, Andrew Ta, Jörgen Edvinsson, Dominic H. Rivas, Hans Nääs","doi":"10.1109/JSSC.2004.837027","DOIUrl":null,"url":null,"abstract":"A single-chip, very-low-power interface IC used in implantable pacemaker systems is presented. It contains LNAs, filters, ADCs, a battery management system, voltage multipliers, high voltage pulse generators, programmable logic and timing control. The 200k transistor IC occupies 49mm/sup 2/, is fabricated in a 0.5/spl mu/m 2P3M multi-V, CMOS process and consumes 8/spl mu/W from a 2.8V supply.","PeriodicalId":273317,"journal":{"name":"2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"159","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/JSSC.2004.837027","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 159

Abstract

A single-chip, very-low-power interface IC used in implantable pacemaker systems is presented. It contains LNAs, filters, ADCs, a battery management system, voltage multipliers, high voltage pulse generators, programmable logic and timing control. The 200k transistor IC occupies 49mm/sup 2/, is fabricated in a 0.5/spl mu/m 2P3M multi-V, CMOS process and consumes 8/spl mu/W from a 2.8V supply.
用于植入式起搏器应用的低功耗CMOS混合信号集成电路
介绍了一种用于植入式心脏起搏器系统的单片极低功耗接口集成电路。它包含lna、滤波器、adc、电池管理系统、电压乘法器、高压脉冲发生器、可编程逻辑和定时控制。200k晶体管IC占地49mm/sup 2/,采用0.5/spl mu/m 2P3M多v CMOS工艺制造,功耗为8/spl mu/W,来自2.8V电源。
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