A. López-Martín, Fermin Esparza-Alfaro, J. Ramírez-Angulo, R. Carvajal
{"title":"Accurate micropower class AB CMOS voltage-to-current converter","authors":"A. López-Martín, Fermin Esparza-Alfaro, J. Ramírez-Angulo, R. Carvajal","doi":"10.1109/ECCTD.2011.6043290","DOIUrl":null,"url":null,"abstract":"A CMOS voltage-to-current converter is presented. It is based on a class AB current mirror with very low input resistance and a passive resistor connected to the input for voltage-to-current conversion. Class AB operation is achieved without extra supply voltage requirements or static power consumption, using Quasi-Floating Gate techniques. Measurement results of a differential configuration for a 0.5µm CMOS test chip prototype are presented. A measured harmonic distortion at 1MHz of −59dB is achieved for current signals 20 times larger than the bias currents. The circuit consumes 265µW using a supply voltage of ±1.65V and requires a silicon area of 0.04mm2.","PeriodicalId":126960,"journal":{"name":"2011 20th European Conference on Circuit Theory and Design (ECCTD)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 20th European Conference on Circuit Theory and Design (ECCTD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECCTD.2011.6043290","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
A CMOS voltage-to-current converter is presented. It is based on a class AB current mirror with very low input resistance and a passive resistor connected to the input for voltage-to-current conversion. Class AB operation is achieved without extra supply voltage requirements or static power consumption, using Quasi-Floating Gate techniques. Measurement results of a differential configuration for a 0.5µm CMOS test chip prototype are presented. A measured harmonic distortion at 1MHz of −59dB is achieved for current signals 20 times larger than the bias currents. The circuit consumes 265µW using a supply voltage of ±1.65V and requires a silicon area of 0.04mm2.