S. Gwyn, S. Watson, M. Knapp, S. Viola, G. Giuliano, T. Slight, S. Stanczyk, S. Grzanka, C. Robinson, A. Yadav, K. Docherty, E. Rafailov, P. Perlin, S. Najda, M. Leszczynski, M. Haji, A. Kelly
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引用次数: 1
Abstract
Owing to increased performance capabilities over their LED counterparts, Gallium Nitride (GaN) based Laser Diodes (LDs) are becoming more prevalent in several applications, including lighting, visible light communications, medical spectroscopy, and atom cooling. For many of these applications, a tunable, precise wavelength is necessary such that chromatic aberrations are minimized and that specific wavelengths with narrow linewidth can be utilized for atomic transitions or filtered communications systems. This paper discusses one method of achieving single-mode lasing operation in GaN LDs, namely the deeply-etched sidewall grating Distributed Feedback (DFB) LD. Optical characteristics of such devices will be discussed, as well as their feasibility for optical communications.
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