Scaling analysis of capacitive MEMS microphones considering residual stress

Kui Song, Weiguan Zhang, Wei Xu, Yi-Kuen Lee
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引用次数: 3

Abstract

We conduct a systematic scaling analysis of the sensitivity of a silicon capacitive MEMS microphone based on a dimensionless 1-degree-of-freedom (1DOF) model considering residual stress. The theoretical normalized sensitivity we derived is a nonlinear function of normalized diaphragm size (h/a), acoustic driving frequency, 3 effective stiffness terms and the other parameters. From our 1DOF model, the optimal normalized diaphragm has to be trade-off between high sensitivity and large bandwidth. In addition, we found that a critical diaphragm radius of 415 μm for a silicon MEMS microphone, is located at the inflection point in the sensitivity function of the radius. In addition, this critical radius corresponds to the minimum effective stiffness of the microphone.
考虑残余应力的电容式MEMS传声器标度分析
基于考虑残余应力的无量纲1自由度(1DOF)模型,对硅电容式MEMS传声器的灵敏度进行了系统的标度分析。理论归一化灵敏度是归一化膜片尺寸(h/a)、声驱动频率、3个有效刚度项和其他参数的非线性函数。从我们的1DOF模型来看,最佳的归一化光圈必须在高灵敏度和大带宽之间进行权衡。此外,我们发现对于硅MEMS麦克风而言,临界膜片半径为415 μm,位于该半径灵敏度函数的拐点处。此外,该临界半径对应于传声器的最小有效刚度。
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