High brightness field emission from carbon nanosheets and back-gated devices

M. Zhu, Xin Zhao, R. Outlaw, K. Hou, P. Miraldo, D. Manos, T. Tyler, O. Shenderova
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引用次数: 0

Abstract

A 2D atomically thin nanostructure, carbon nanosheet, was synthesized via radio frequency plasma enhanced chemical vapor deposition. Carbon nanosheets are free-standing, and have flat surface morphologies, atomically thin edges, and defective graphitic structures. Field electron emission from carbon nanosheets was measured under diode mode. Carbon nanosheets samples have turn-on fields of 5-10 V/mum, and can yield a total emission current of 28 mA from an area of 8 times 8 mm2 and an emission current density of ~2 mA/mm2 from an area of 1 times 1 mm2. Back-gated triode devices using carbon nanosheets as cathode material were also designed, fabricated, and tested under triode mode. A total emission current of 1.3 mA was achieved from one single device.
碳纳米片和背控器件的高亮度场发射
采用射频等离子体增强化学气相沉积法合成了一种二维原子薄纳米结构碳纳米片。碳纳米片是独立的,具有平坦的表面形态,原子薄的边缘和有缺陷的石墨结构。在二极管模式下测量了碳纳米片的场电子发射。碳纳米片样品的导通场为5 ~ 10 V/mum,在8 × 8 mm2的面积上产生28 mA的总发射电流,在1 × 1 mm2的面积上产生~2 mA/mm2的发射电流密度。设计、制作了以碳纳米片为正极材料的背门控三极管器件,并在三极管模式下进行了测试。单器件总发射电流达到1.3 mA。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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