Analysis Of CPU Loading Effect On ESD Susceptibility

O. Izadi, H. Shumiya, Shota Konno, K. Araki, D. Pommerenke, Donghyun Kim
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Abstract

Two complementary approaches are presented to help to understand how CPU loading affects the sensitivity of an electronic device to ESD (electrostatic discharge) stress. Both approaches rely on synchronized noise injection while the software is running at the desired load. One of the approaches monitors the device's current consumption while the other monitors the device's electromagnetic field to synchronize noise injections. These approaches revealed that as the CPU loading increases, the device becomes more active and hence more susceptible to ESD stress. Moreover, it was observed that, in each loading condition, the device randomly became susceptible. These complementary approaches enable the capturing of high/low active intervals as well as the injection of noise voltage to the desired activity, thus, allowing for the analysis of the effect of CPU loading on ESD susceptibility.
CPU负载对ESD敏感性的影响分析
提出了两种互补的方法来帮助理解CPU负载如何影响电子设备对ESD(静电放电)应力的灵敏度。这两种方法都依赖于软件在期望负载下运行时的同步噪声注入。其中一种方法监测设备的电流消耗,而另一种方法监测设备的电磁场以同步噪声注入。这些方法表明,随着CPU负载的增加,器件变得更加活跃,因此更容易受到ESD应力的影响。此外,观察到,在每种加载条件下,装置随机变得易感。这些互补的方法可以捕获高/低活动间隔,并将噪声电压注入到所需的活动中,从而可以分析CPU负载对ESD敏感性的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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