Quasi FGMOS Inverter: A Strategy for low power applications

Alekhya Yalla, U. Nanda
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Abstract

Low voltage operation and low power consumption is of paramount need in integrated circuits which are employed in portable devices. Floating gate MOS (FGMOS) transistor is an analog technique to achieve low power while maintaining performance in various applications such as neural networks, PLL, D/A and A/D converters and memory circuits. This paper deals with various FGMOS techniques with supply voltage $\mathrm{V_{DD}}=220\mathrm{mV}$ operating in sub-threshold region which is very crucial for lowering power dissipation and achieves higher speed compared to CMOS circuits. The proposed work is validated through inverter circuits using TSMC $\mathbf{0.18\mu{m}}$ technology in mentor graphics tool.
准FGMOS逆变器:低功耗应用策略
在便携式设备中使用的集成电路中,低电压和低功耗是最重要的要求。浮栅MOS (FGMOS)晶体管是一种模拟技术,在实现低功耗的同时保持各种应用的性能,如神经网络,锁相环,D/A和A/D转换器和存储电路。本文讨论了各种FGMOS技术,其电源电压$\mathrm{V_{DD}}=220\mathrm{mV}$工作在亚阈值区域,这对于降低功耗和实现比CMOS电路更高的速度至关重要。采用mentor图形工具中的TSMC $\mathbf{0.18\mu{m}}$技术,通过逆变电路验证了所提出的工作。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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