AlGaAsSb/AlAsSb Bragg mirrors on InP for 1.3 and 1.55 /spl mu/m vertical cavity surface emitting lasers

1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application Pub Date : 1997-08-11 DOI:10.1109/LEOSST.1997.619096

G. Almuneau, F. Genty, L. Chusseau, S. Gaillard, N. Bertru, J. Jacquet

引用次数: 1

Abstract

The AlGaAsSb system appears very suitable to elaborate high reflective DBRs with a low number of pairs operating at wavelengths of interest for telecommunications (1.3 and 1.55 /spl mu/m). Very high reflectivities of 99.2% at 1.56 /spl mu/m and for the first time 98.8% at 1.3 /spl mu/m have been obtained. We are now investigating this antimonide approach for fabricating monolithic VCSELs. Thus the elaboration of an active layer composed of InGaAs wells encapsulated within AlGaInAs barriers is under evaluation.

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用于1.3和1.55 /spl mu/m垂直腔面发射激光器的InP上AlGaAsSb/AlAsSb Bragg反射镜

AlGaAsSb系统似乎非常适合制作高反射dbr，其低对数工作在电信感兴趣的波长(1.3和1.55 /spl mu/m)。在1.56 /spl mu/m处获得了99.2%的高反射率，在1.3 /spl mu/m处首次获得了98.8%的高反射率。我们现在正在研究这种制造单片vcsel的锑化方法。因此，正在评估由封装在AlGaInAs屏障内的InGaAs井组成的活性层。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application

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