Junction Temperature and Current Synchronous Sensing for SiC MOSFETs Based on Electroluminescence Hyperspectral

Abstract

The electroluminescence effect of SiC MOSFET is correlated with parameters such as junction temperature and device current, providing a new approach for non-intrusive online device status sensing. However, existing discrete photodiode solutions have encountered bottlenecks with increasing monitoring parameters and decreasing sampling delays. This work proposes a SiC device status monitoring scheme based on the integrated miniature hyperspectral spectrometer. Convolutional smoothing and partial least squares regression are applied to the obtained hyperspectral data sets. The real-time online monitoring of junction temperature and device current is achieved under low signal-to-noise ratios where the device only emits light in the dead time. The synchronous detection errors for temperature and current are only 3.11°C and 0.81A, respectively.