Total Ionizing Dose Hardness Enhancement at Room Temperature in CMOS 0.25µm Technology

2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2020-10-01 DOI:10.1109/RADECS50773.2020.9857680

G. Cussac, L. Artola, T. Nuns, S. Ducret

引用次数: 0

Abstract

This work presents electricals characteristics of primary and secondly irradiated MOSFET transistors. Secondly irradiated transistors after nominal operation recovery showed a great TID resistance betterment. This improvement is allowed by latent interface traps charge build-up during long time annealing. Latent interface traps effects on electrical degradation at STI level are physically explained with simulation and experiment comparison.

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CMOS 0.25µm技术室温下总电离剂量硬度增强

本文介绍了一次辐照和二次辐照的MOSFET晶体管的电学特性。其次，经辐照后的晶体管在标称运算恢复后，其阻抗有较大的改善。这种改进是由于在长时间退火过程中潜在的界面陷阱电荷的积累。通过仿真和实验对比，从物理上解释了潜在界面陷阱对STI水平电退化的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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