Tellurite glass microcavity resonators integrated on a silicon photonics platform

H. Frankis, Dawson B. Bonneville, J. Bradley
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引用次数: 2

Abstract

Abstract. We report on the design and measurement of tellurium oxide microcavity resonators coupled to silicon bus waveguides on silicon photonic chips. The resonators are fabricated using a standard silicon photonics foundry processing flow in which the SiO2 top-cladding is etched in a ring shape and aligned next to a silicon bus waveguide. The resulting microtrench is coated in a tellurium oxide film by reactive sputtering in a post-processing step to form the waveguiding layer of the resonator. A 100-μm radius trench with a 1115-nm-thick TeO2 film is measured to have an internal Q factor of 0.9  ×  105. Smoothing the etch wall surface with a fluoropolymer coating is shown to enhance the Q factor of several devices, with a trench coated in a 630-nm-thick TeO2 film demonstrating a Q factor of 2.1  ×  105 corresponding to 1.7-dB/cm waveguide loss. These results demonstrate a potential pathway toward monolithic integration of tellurite glass-based nonlinear and rare-earth-doped devices compatible with silicon photonics platforms.
集成在硅光子平台上的碲酸盐玻璃微腔谐振器
摘要本文报道了在硅光子芯片上耦合到硅母线波导的氧化碲微腔谐振器的设计和测量。谐振器是使用标准硅光子学铸造工艺流程制造的,其中SiO2顶部包层被蚀刻成环形,并在硅母线波导旁边对齐。在后处理步骤中,通过反应溅射将所得微沟槽涂覆在氧化碲薄膜上,形成谐振器的波导层。在半径为100 μm、厚度为1115 nm的TeO2薄膜上,测得内部Q因子为0.9 × 105。用含氟聚合物涂层平滑蚀刻壁表面可以提高几种器件的Q因子,其中在630 nm厚的TeO2薄膜中涂层的沟槽显示出对应于1.7 db /cm波导损耗的Q因子为2.1 × 105。这些结果表明了与硅光子平台兼容的碲酸盐玻璃非线性和稀土掺杂器件的单片集成的潜在途径。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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CiteScore
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