Thermal characterization of the VBIC dielectrically isolated device

Abstract

This paper presents thermal characterization of the dielectrically isolated bipolar junction transistor (DIBJT) with the vertical bipolar inter-company (VBIC) model. The VBIC model incorporates the thermal nodes of a transistor. Semiconductor devices are strongly influenced by the thermal effects. When the device is heated, it raises its local temperature which changes the device's intrinsic parameters. This paper shows the behavior of collector current, base current, thermal transconductances, and junction temperature versus temperature. It also shows several other temperature characteristics of a VBIC DIBJT device.