Y. K. Lim, Suat Cheng Khoo, Kai Tern Sih, C. Seet, Beichao Zhang, T. Lee
{"title":"A novel integrated scheme to improve the electrical and electromigration performance of Cu interconnects","authors":"Y. K. Lim, Suat Cheng Khoo, Kai Tern Sih, C. Seet, Beichao Zhang, T. Lee","doi":"10.1109/IPFA.2003.1222751","DOIUrl":null,"url":null,"abstract":"Process variations such as post etch cleaning, pre-cleaning prior to Cu barrier/seed deposition and Cu annealing can yield significant differences in electromigration (EM) failure populations even while maintaining general microstructure consistency. In this paper, focus-ion-beam (FIB) cross-sectional imaging is used to reveal how bimodal EM failures originate. In addition, a novel integrated scheme with an optimized post etch clean after nitride breakthrough, in-situ H/sub 2/ contained precursor treatment prior to Cu barrier/seed deposition and an optimized Cu anneal condition is introduced to improve the electrical and eliminate the bimodal EM failures of Cu interconnects.","PeriodicalId":266326,"journal":{"name":"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2003-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2003.1222751","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Process variations such as post etch cleaning, pre-cleaning prior to Cu barrier/seed deposition and Cu annealing can yield significant differences in electromigration (EM) failure populations even while maintaining general microstructure consistency. In this paper, focus-ion-beam (FIB) cross-sectional imaging is used to reveal how bimodal EM failures originate. In addition, a novel integrated scheme with an optimized post etch clean after nitride breakthrough, in-situ H/sub 2/ contained precursor treatment prior to Cu barrier/seed deposition and an optimized Cu anneal condition is introduced to improve the electrical and eliminate the bimodal EM failures of Cu interconnects.