A decade bandwidth resistive FET singly balanced MIC mixer

Chi-Yang Chang, Chu-Chen Yang, D. Niu
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引用次数: 4

Abstract

A novel decade bandwidth resistive FET singly balanced MIC mixer using a broadband CPW to CPS balun is developed. The mixer uses two NEC71000 MESFETs and realized with uniplanar lines. At 17 dBm LO power and 1 GHz IF, the mixer shows a conversion loss of 5.7 to 11 dB for 2 to 20 GHz RF and 10 to 15 dB for 20 to 27 GHz RF. The IF bandwidth is from 10 MHz to 7 GHz. The signal orthogonality between RF and IF makes the IF signal may overlap the RF signal. The mixer shows an output P/sub 1/ /sub dB/ of 11.5 dBm (corresponding to input P/sub 1/ /sub dB/ of 18.5 dBm) at 8 GHz RF, 1 GHz IF and 16.5 dBm LO power. The input IF, is 24 to 37 dBm corresponding to 2.5 to 20 GHz RF and 1 GHz IF. The mixer is fabricated on a 15 mil thick Al/sub 2/O/sub 3/ MIC substrate.
一种十进带宽电阻性场效应管单平衡MIC混频器
研制了一种新型的十进带宽阻性场效应管单平衡MIC混频器,采用宽带CPW - CPS平衡。混频器采用两个NEC71000 mesfet,采用单平面线实现。在17 dBm本端功率和1 GHz中频下,混合器在2至20 GHz射频下的转换损耗为5.7至11 dB,在20至27 GHz射频下的转换损耗为10至15 dB。中频带宽范围为10mhz ~ 7ghz。射频与中频信号的正交性使得中频信号可以与射频信号重叠。该混频器在8 GHz RF、1 GHz中频和16.5 dBm LO功率下的输出P/sub 1/ /sub dB/为11.5 dBm(对应于输入P/sub 1/ /sub dB/为18.5 dBm)。输入中频为24 ~ 37dbm,对应2.5 ~ 20ghz射频和1ghz中频。该混合器是在15密耳厚的Al/sub 2/O/sub 3/ MIC基板上制造的。
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