Two Dimensional Materials based Heterostructures for Photosensing Applications

2018 15th International Conference on Smart Cities: Improving Quality of Life Using ICT & IoT (HONET-ICT) Pub Date : 2018-10-01 DOI:10.1109/HONET.2018.8551327

M. Iqbal, Sana T Khan

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引用次数: 1

Abstract

Graphene (Gr) and transition metal dichalcogenides (TMDC) have wide scope in electronic and optoelectronic industry because of incredible optical and electrical properties. The study investigates the utilization of molybdenum disulfide-graphene (MoS2-Gr) hybrid field effect transistor (FET) as photosensor. The photo-current response of hybrid FET was studied for source-drain voltages(Vds) range from 1 to 5 V. The important optical figure of merits such as photoresponsivity (Rλ) and external quantum efficiency (EQE) are calculated to evaluate the performance of FET. Enhancement in the optical performance of FET is observed. MoS2-Gr divulges high Rλ (3.34 × 10³ AW^-1) while the EQE of hybrid FET (1.8 × 10⁴) is higher than that of individual structures. This methodology of fabricating TMDCs-Gr based hybrid devices opens new doors for advances in highly efficient photosensor for sensing and optoelectronic applications.

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基于二维材料的异质结构光敏应用

石墨烯(Gr)和过渡金属二硫族化合物(TMDC)由于其优异的光学和电学性能，在电子和光电工业中有着广泛的应用前景。研究了利用二硫化钼-石墨烯(MoS2-Gr)杂化场效应晶体管(FET)作为光电传感器。研究了源极-漏极电压(Vds)在1 ~ 5 V范围内混合场效应管的光电流响应。计算了光响应率(Rλ)和外量子效率(EQE)等重要的光学参数来评价场效应管的性能。观察到FET的光学性能有所提高。MoS2-Gr具有较高的Rλ (3.34 × 103 AW-1)，而混合FET的EQE (1.8 × 104)高于单个结构。这种制造基于TMDCs-Gr的混合器件的方法为传感和光电子应用的高效光敏传感器的进步打开了新的大门。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2018 15th International Conference on Smart Cities: Improving Quality of Life Using ICT & IoT (HONET-ICT)

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