Physics-based Compact Models: An Emerging Trend in Simulation-based GaN HEMT Power Amplifier Design

Abstract

An important and impactful trend in GaN HEMT transistor model representation is the emergence of physics-based compact models. Developed from device physics, these models offer: high scalability, close connection to technology for deign-technology co-optimization, ability to model statistical manufacturing variations, and ability to model long-term device degradation effects. The novel features of these models will be compared with the traditional empirical modeling approaches. Results achieved so far with these models will be discussed. As the power amplifier design requirements become increasingly stringent, physics-based compact models can become enablers of next generation simulation-based power amplifier designs.