Modeling of Single-Electron Transistor in Advanced Design System

Abstract

Single-electron transistor (SET) was successfully modeled in Advanced Design System (ADS) software. Simulation of the model in ADS (modeled SET) showed typical characteristics of SET including Coulomb blockade (CB) region and Coulomb oscillations. The simulated results of the modeled SET were compared with those of a commercial SIMON simulator in certain ranges of drain-source voltage and temperature validating accuracy of the modeling method.