Characterization of GaAs Schottky Detectors in the Submillimeter Range

1981 International Conference on Submillimeter Waves and Their Applications Pub Date : 1981-12-01 DOI:10.1109/ICSWA.1981.9335107

M. Pyée, A. Kreisler, M. Redon

引用次数: 1

Abstract

We report results in video-detection (.7–3.7 THz) and harmonic mixing (.9 THz) on various Schottky diodes. A comparative analysis is made with respect to parameters such as epilayer thickness or doping, as well as junction geometry.

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亚毫米范围内GaAs肖特基探测器的表征

我们报告了视频检测(.7-3.7太赫兹)和谐波混合(.9太赫兹)的结果太赫兹)在各种肖特基二极管。比较分析是关于参数，如涂层厚度或掺杂，以及结的几何形状。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1981 International Conference on Submillimeter Waves and Their Applications

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