Tandem GaSb/InGaAsSb thermophotovoltaic cells

Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 Pub Date : 1997-09-29 DOI:10.1109/PVSC.1997.654241

V. Andreev, V. Khvostikov, V. Larionov, V. Rumyantsev, S. Sorokina, M. Shvarts, V. I. Vasil’ev, A. Vlasov

引用次数: 15

Abstract

Computer modelling of a tandem thermophotovoltaic (TPV) system has been carried out. The monolithic GaSb/InGaAsSb tandem TPV devices have been designed and fabricated by LPE. The cell consists of: nGaSb (substrate); (n-p)In/sub x/Ga/sub 1-x/As/sub y/Sb/sub 1-y/ (E/sub g//spl ap/0.56 eV, bottom cell); p/sup ++/-n/sup ++/GaSb (tunnel junction); (n-p)-GaSb (top cell). External quantum yields of 80% at 800-1600 nm wavelength (top cell) and of about 75% at 1800-2100 nm (bottom cell) have been measured. V/sub OC/=0.61 V and FF=0.75 were achieved in a tandem cell at current density of 0.7 A/cm/sup 2/.

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串联GaSb/InGaAsSb热光伏电池

对串联热光伏(TPV)系统进行了计算机建模。采用LPE技术设计和制作了单片GaSb/InGaAsSb串联TPV器件。细胞由:nGaSb(底物)组成;(n-p)In/sub x/Ga/sub 1-x/As/sub y/Sb/sub 1-y/ (E/sub g//spl ap/0.56 eV，底部电池);p/sup ++/-n/sup ++/GaSb(隧道结);(n-p)-GaSb(上单元格)。在800-1600 nm波长处(上电池)的外量子产率为80%，在1800-2100 nm(下电池)的外量子产率约为75%。在电流密度为0.7 a /cm/sup 2/的串联电池中，V/sub OC/=0.61 V, FF=0.75。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997

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