Analysis and fabrication of sub micron scale directional coupler in high-index Silicon-On-Insulator

Ido E. Dotan, D. Goldring, D. Mendlovic
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引用次数: 1

Abstract

In this paper we describe the design, fabrication and analysis of a directional coupler using sub micron SOI waveguides. Specifically, we focus on couplers featuring sub 100nm waveguide separation. Several phenomena that occur due to the ultra small gap are examined. We show that the etching rate at the waveguides gap is decreased and as a consequence the coupling between the waveguides is enhanced. Three dimensional numerical simulations are presented as well as fabrication results.
高折射率绝缘体上硅亚微米级定向耦合器的分析与制作
本文介绍了一种基于亚微米SOI波导的定向耦合器的设计、制造和分析。具体而言,我们专注于具有低于100nm波导分离的耦合器。研究了由于超小间隙引起的几种现象。结果表明,在波导间隙处的蚀刻速率降低,从而增强了波导之间的耦合。给出了三维数值模拟和制造结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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