Microwave Bipolar Transistor Technology - Present and Prospects

Abstract

This paper reviews the present status and future prospects for Si bipolar transistors and monolithic integrated circuits designed for applications at frequencies above 500MHz. The technological limitations on performance are discussed as well as the fundamental strengths and basic terminal characteristics which insure that bipolar transistors and integrated circuits will continue to offer the most cost-effective solutions to many microwave system design problems in the coming decade of the 1980's.