D. Greenlaw, G. Burbach, T. Feudel, F. Feustel, K. Frohberg, F. Graetsch, G. Grasshoff, C. Hartig, T. Heller, K. Hempel, M. Horstmann, P. Huebler, R. Kirsch, S. Kruegel, E. Langer, A. Pawlowitsch, H. Ruelke, H. Schuehrer, R. Stephan, A. Wei, T. Werner, K. Wieczorek, M. Raab
{"title":"Taking SOI substrates and low-k dielectrics into high-volume microprocessor production","authors":"D. Greenlaw, G. Burbach, T. Feudel, F. Feustel, K. Frohberg, F. Graetsch, G. Grasshoff, C. Hartig, T. Heller, K. Hempel, M. Horstmann, P. Huebler, R. Kirsch, S. Kruegel, E. Langer, A. Pawlowitsch, H. Ruelke, H. Schuehrer, R. Stephan, A. Wei, T. Werner, K. Wieczorek, M. Raab","doi":"10.1109/IEDM.2003.1269278","DOIUrl":null,"url":null,"abstract":"SOI and low-k technologies are rapidly approaching production maturity. This paper highlights several challenges found when moving them from development to high-volume manufacturing. In overcoming these challenges in wafer processing and transistor development, we have achieved yield learning and performance enhancement rates equivalent to or better than conventional technologies.","PeriodicalId":344286,"journal":{"name":"IEEE International Electron Devices Meeting 2003","volume":"83 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE International Electron Devices Meeting 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2003.1269278","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 19
Abstract
SOI and low-k technologies are rapidly approaching production maturity. This paper highlights several challenges found when moving them from development to high-volume manufacturing. In overcoming these challenges in wafer processing and transistor development, we have achieved yield learning and performance enhancement rates equivalent to or better than conventional technologies.