A charge sensitive preamplifier based on GaAs heterojunction bipolar transistors

Abstract

Summary form only. The application of GaAs technology to particle physics experiments has been investigated. It appears that GaAs heterojunction bipolar transistors (HBT) might suit the requirements for the front end electronics, such as radiation hardness and adequate gm at very low current for low power dissipation and at fast shaping times. Since the operation of an HBT is similar to that of a silicon bipolar transistor, general analog simulators, such as SPICE, could be used to simulate HBT designs. A preamplifier design with RC-CR shaping has been developed, and a prototype has been fabricated using surface mount technology and discrete HBTs.<>